10-Gb/s Indoor THz Communications Using Industrial Si Photonics Technology

In this letter, we report the design, fabrication, and measurement of a silicon photonics-based transmitter (Tx) offering both mass production capability and high integration level potentiality. The Tx circuit consists of an integrated photodiode generating a 200-300-GHz signal for photonic upconver...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2018-04, Vol.28 (4), p.362-364
Main Authors: Lacombe, E., Belem-Goncalves, C., Luxey, C., Gianesello, F., Durand, C., Gloria, D., Ducournau, G.
Format: Article
Language:English
Subjects:
300-GHz wireless communications
Engineering Sciences
High-speed optical techniques
microwave photonics
Optical fiber communication
Optical modulation
Optical receivers
photonic integrated circuits
Photonics
Silicon
silicon photonics
Wireless communication
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Summary:In this letter, we report the design, fabrication, and measurement of a silicon photonics-based transmitter (Tx) offering both mass production capability and high integration level potentiality. The Tx circuit consists of an integrated photodiode generating a 200-300-GHz signal for photonic upconversion from baseband to millimeter-wave. This Tx achieved output power in the range of −20 to −30 dBm over the 150-300-GHz frequency band is used to demonstrate an indoor 300-GHz wireless link. The receiver is using a commercial Schottky diode to enable direct detection. Amplitude modulation is successfully tested, and real-time bit error rates are shown for up to 10-Gb/s data rates.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2018.2811242