Design of a GaN-on-Si Single-Balanced Resistive Mixer for Ka-band Satcom

Design and performance of a gallium nitride (GaN)-on-Si mixer for the Ka -band satellite telecom applications are presented in this letter. GaN-on-Si offers the advantage of high-volume production even for millimeter-wave applications. A single-balanced architecture is selected as an optimum tradeof...

Full description

Saved in:
Bibliographic Details
Published in:IEEE microwave and wireless components letters 2019-01, Vol.29 (1), p.56-58
Main Authors: De Padova, Aurora, Longhi, Patrick E., Colangeli, Sergio, Ciccognani, Walter, Limiti, Ernesto
Format: Article
Language:English
Subjects:
Bandwidth
Bandwidths
Couplers
frequency conversion
Gallium nitride
Gallium nitrides
Integrated circuits
K-band
Linearity
Millimeter waves
Mixers
MMIC (circuits)
MMICs
Optimization
Power measurement
Radio frequency
Satellite communications
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Design and performance of a gallium nitride (GaN)-on-Si mixer for the Ka -band satellite telecom applications are presented in this letter. GaN-on-Si offers the advantage of high-volume production even for millimeter-wave applications. A single-balanced architecture is selected as an optimum tradeoff between circuit complexity and rejection of local oscillator (LO) harmonics. An alternative circuit topology is adopted where the in-phase combiner and hybrid quadrature couplers, used to obtain the desired signal phasing at mixer output, are also employed as circuit elements to inject external bias voltages so to optimize the mixer's conversions loss (CL). The mixer features 11-dB CL, 11- and 22-dBm P1dB and IIP3 respectively, in the 26-31-GHz bandwidth when driven by a 10-dBm LO level. Monolithic microwave integrated circuit area is less than 6 mm 2 .
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2018.2880315