An X -Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

An {{X}} -band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power ( {{P}}_{\mathbf {sat}} ) at 11 GHz. The measured ga...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2019-09, Vol.29 (9), p.607-609
Main Authors: Tsai, Jeng-Han, Yu, TiKu, Huang, Wang-Lung
Format: Article
Language:English
Subjects:
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">X -band
Circuit faults
CMOS
CMOS technology
Couplings
fully integration
power amplifier (PA)
Power combiners
Radio frequency
Semiconductor device measurement
transformer
Transistors
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Summary:An {{X}} -band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power ( {{P}}_{\mathbf {sat}} ) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point ( {{OP}}_{\mathbf {1\,dB}} ) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest {{P}}_{\mathbf {sat}} and the highest {{OP}}_{\mathbf {1\,dB}} among other reported CMOS PAs around {{X}} -band to date.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2019.2931453