Scalability of Multifinger HEMT Performance

This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2020-09, Vol.30 (9), p.1-4
Main Authors: Crupi, Giovanni, Raffo, Antonio, Vadala, Valeria, Vannini, Giorgio, Schreurs, Dominique M. M.-P., Caddemi, Alina
Format: Article
Language:English
Subjects:
Circuits
Equivalent circuit
Field effect transistors
GaAs
HEMTs
High electron mobility transistors
high-electron-mobility transistor (HEMT)
Layout
Logic gates
Microwave circuits
Microwave FETs
multifinger layout
Performance evaluation
scalability
Semiconductor devices
Transistors
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Summary:This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on the device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2020.3012181