Ultralow-threshold sapphire substrate-bonded top-emitting 850-nm VCSEL array

Oxide-confined top-emitting vertical-cavity surface-emitting-laser (VCSEL) 8 × 8 arrays were designed and fabricated with ultralow thresholds. The arrays were flip-chip bonded onto sapphire substrates and mounted in pin-grid-array packages as optical transmitter arrays. By using the offset-contact b...

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Bibliographic Details
Published in:IEEE photonics technology letters 2002-09, Vol.14 (9), p.1234-1236
Main Authors: Liu, J.J., Riely, B., Shen, P.H., Das, N., Newman, P., Chang, W., Simonis, G.
Format: Article
Language:English
Subjects:
Apertures
Arrays
Bonding
Bonding processes
Devices
Distributed Bragg reflectors
Driver circuits
Gallium arsenide
Optical arrays
Optical transmitters
Packaging
Photonics
Sapphire
Substrates
Thresholds
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
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Summary:Oxide-confined top-emitting vertical-cavity surface-emitting-laser (VCSEL) 8 × 8 arrays were designed and fabricated with ultralow thresholds. The arrays were flip-chip bonded onto sapphire substrates and mounted in pin-grid-array packages as optical transmitter arrays. By using the offset-contact bonding process, we were able to obtain very high yield for hybridized devices without damaging the VCSEL mesas. Room-temperature lasing thresholds below 70 μA were found from some of these packaged VCSELs with measured oxide apertures 2.6 μm in diameter. The emission spectrum at an injection current of 70 μA showed a full-width at half-maximum linewidth of less than 2.5 A. Polarization properties were also confirmed from the output of the device. The superior performance was attributed to the optimized size and placement of the confinement aperture and the precise alignment of the gain profile of the active region to the mode of the resonant cavity.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2002.801093