Thermally induced nonlinearities in high-speed p-i-n photodetectors

Nonlinearities in the responsivity of high-speed p-i-n photodetectors at high photocurrents can limit the useful dynamic range in photonic systems. This letter describes a nonlinearity in the quantum efficiency in InGaAs photodetectors designed for applications at 1.5 μm is due to significant ohmic...

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Bibliographic Details
Published in:IEEE photonics technology letters 2004-01, Vol.16 (1), p.239-241
Main Authors: Stievater, T.H., Williams, K.J.
Format: Article
Language:English
Subjects:
Distributed feedback devices
Heating
High speed
Indium gallium arsenide
Nonlinearity
Ohmic
Optical receivers
Photoconductivity
Photocurrent
Photodetectors
Photoelectric effect
Photonics
PIN photodiodes
Pulse measurements
Radio frequency
Voltage
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Summary:Nonlinearities in the responsivity of high-speed p-i-n photodetectors at high photocurrents can limit the useful dynamic range in photonic systems. This letter describes a nonlinearity in the quantum efficiency in InGaAs photodetectors designed for applications at 1.5 μm is due to significant ohmic heating of the intrinsic region. Measured changes in responsivity of about 10% at photocurrents of 12 mA are attributed to a thermal bandgap shift, based on comparisons with temperature dependent measurements and a model of ohmic heating.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2003.819369