Loading…

Reduced surface sidewall recombination and diffusion in quantum-dot lasers

We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10 4 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, the...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE photonics technology letters 2006-09, Vol.18 (17), p.1861-1863
Main Authors:	Moore, S.A., O'Faolain, L., Cataluna, M.A., Flynn, M.B., Kotlyar, M.V., Krauss, T.F.
Format:	Article
Language:	English
Subjects:	Carrier confinement Confinement Current carriers Diffusion length Lasers low threshold Optical materials Quantum dot lasers Quantum dots Quantum well lasers Quantum wells Radiative recombination Semiconductor lasers Semiconductor materials Surface emitting lasers surface recombination Threshold current Threshold currents
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

cited_by	cdi_FETCH-LOGICAL-c320t-22f1bc00550e57177240d0833d3b4ef6fbdaae0af3e5da5f4947c05a96068f483
cites	cdi_FETCH-LOGICAL-c320t-22f1bc00550e57177240d0833d3b4ef6fbdaae0af3e5da5f4947c05a96068f483
container_end_page	1863
container_issue	17
container_start_page	1861
container_title	IEEE photonics technology letters
container_volume	18
creator	Moore, S.A. O'Faolain, L. Cataluna, M.A. Flynn, M.B. Kotlyar, M.V. Krauss, T.F.
description	We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10 4 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5times10 5 cm/s and 5 mum, respectively) allowing the creation of narrow (2-3 mum wide) lasers with comparable threshold currents to those of broad area devices
doi_str_mv	10.1109/LPT.2006.881206
format	article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LPT_2006_881206</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1677638</ieee_id><sourcerecordid>896209006</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-22f1bc00550e57177240d0833d3b4ef6fbdaae0af3e5da5f4947c05a96068f483</originalsourceid><addsrcrecordid>eNpdkE1Lw0AQhhdRsFbPHrwEL57Szn5mc5TiJwVF6nnZZGchJR_tbhbx35tSQfA078DzDsNDyDWFBaVQLtfvmwUDUAutKQN1Qma0FDQHWojTKcOUKeXynFzEuAWgQnIxI68f6FKNLospeFtjFhuHX7Zts4D10FVNb8dm6DPbu8w13qd42Jo-2yfbj6nL3TBmrY0Y4iU587aNePU75-Tz8WGzes7Xb08vq_t1XnMGY86Yp1UNICWgLGhRMAEONOeOVwK98pWzFsF6jtJZ6UUpihqkLRUo7YXmc3J3vLsLwz5hHE3XxBrb1vY4pGh0qRiUk4mJvP1HbocU-uk5o5XiUjEmJ2h5hOowxBjQm11oOhu-DQVzMGsms-Zg1hzNTo2bY6NBxD9aFYXimv8AMGN0Cg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>866356225</pqid></control><display><type>article</type><title>Reduced surface sidewall recombination and diffusion in quantum-dot lasers</title><source>IEEE Xplore (Online service)</source><creator>Moore, S.A. ; O'Faolain, L. ; Cataluna, M.A. ; Flynn, M.B. ; Kotlyar, M.V. ; Krauss, T.F.</creator><creatorcontrib>Moore, S.A. ; O'Faolain, L. ; Cataluna, M.A. ; Flynn, M.B. ; Kotlyar, M.V. ; Krauss, T.F.</creatorcontrib><description>We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10 4 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5times10 5 cm/s and 5 mum, respectively) allowing the creation of narrow (2-3 mum wide) lasers with comparable threshold currents to those of broad area devices</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2006.881206</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Carrier confinement ; Confinement ; Current carriers ; Diffusion length ; Lasers ; low threshold ; Optical materials ; Quantum dot lasers ; Quantum dots ; Quantum well lasers ; Quantum wells ; Radiative recombination ; Semiconductor lasers ; Semiconductor materials ; Surface emitting lasers ; surface recombination ; Threshold current ; Threshold currents</subject><ispartof>IEEE photonics technology letters, 2006-09, Vol.18 (17), p.1861-1863</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-22f1bc00550e57177240d0833d3b4ef6fbdaae0af3e5da5f4947c05a96068f483</citedby><cites>FETCH-LOGICAL-c320t-22f1bc00550e57177240d0833d3b4ef6fbdaae0af3e5da5f4947c05a96068f483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1677638$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Moore, S.A.</creatorcontrib><creatorcontrib>O'Faolain, L.</creatorcontrib><creatorcontrib>Cataluna, M.A.</creatorcontrib><creatorcontrib>Flynn, M.B.</creatorcontrib><creatorcontrib>Kotlyar, M.V.</creatorcontrib><creatorcontrib>Krauss, T.F.</creatorcontrib><title>Reduced surface sidewall recombination and diffusion in quantum-dot lasers</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10 4 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5times10 5 cm/s and 5 mum, respectively) allowing the creation of narrow (2-3 mum wide) lasers with comparable threshold currents to those of broad area devices</description><subject>Carrier confinement</subject><subject>Confinement</subject><subject>Current carriers</subject><subject>Diffusion length</subject><subject>Lasers</subject><subject>low threshold</subject><subject>Optical materials</subject><subject>Quantum dot lasers</subject><subject>Quantum dots</subject><subject>Quantum well lasers</subject><subject>Quantum wells</subject><subject>Radiative recombination</subject><subject>Semiconductor lasers</subject><subject>Semiconductor materials</subject><subject>Surface emitting lasers</subject><subject>surface recombination</subject><subject>Threshold current</subject><subject>Threshold currents</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNpdkE1Lw0AQhhdRsFbPHrwEL57Szn5mc5TiJwVF6nnZZGchJR_tbhbx35tSQfA078DzDsNDyDWFBaVQLtfvmwUDUAutKQN1Qma0FDQHWojTKcOUKeXynFzEuAWgQnIxI68f6FKNLospeFtjFhuHX7Zts4D10FVNb8dm6DPbu8w13qd42Jo-2yfbj6nL3TBmrY0Y4iU587aNePU75-Tz8WGzes7Xb08vq_t1XnMGY86Yp1UNICWgLGhRMAEONOeOVwK98pWzFsF6jtJZ6UUpihqkLRUo7YXmc3J3vLsLwz5hHE3XxBrb1vY4pGh0qRiUk4mJvP1HbocU-uk5o5XiUjEmJ2h5hOowxBjQm11oOhu-DQVzMGsms-Zg1hzNTo2bY6NBxD9aFYXimv8AMGN0Cg</recordid><startdate>20060901</startdate><enddate>20060901</enddate><creator>Moore, S.A.</creator><creator>O'Faolain, L.</creator><creator>Cataluna, M.A.</creator><creator>Flynn, M.B.</creator><creator>Kotlyar, M.V.</creator><creator>Krauss, T.F.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060901</creationdate><title>Reduced surface sidewall recombination and diffusion in quantum-dot lasers</title><author>Moore, S.A. ; O'Faolain, L. ; Cataluna, M.A. ; Flynn, M.B. ; Kotlyar, M.V. ; Krauss, T.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-22f1bc00550e57177240d0833d3b4ef6fbdaae0af3e5da5f4947c05a96068f483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Carrier confinement</topic><topic>Confinement</topic><topic>Current carriers</topic><topic>Diffusion length</topic><topic>Lasers</topic><topic>low threshold</topic><topic>Optical materials</topic><topic>Quantum dot lasers</topic><topic>Quantum dots</topic><topic>Quantum well lasers</topic><topic>Quantum wells</topic><topic>Radiative recombination</topic><topic>Semiconductor lasers</topic><topic>Semiconductor materials</topic><topic>Surface emitting lasers</topic><topic>surface recombination</topic><topic>Threshold current</topic><topic>Threshold currents</topic><toplevel>online_resources</toplevel><creatorcontrib>Moore, S.A.</creatorcontrib><creatorcontrib>O'Faolain, L.</creatorcontrib><creatorcontrib>Cataluna, M.A.</creatorcontrib><creatorcontrib>Flynn, M.B.</creatorcontrib><creatorcontrib>Kotlyar, M.V.</creatorcontrib><creatorcontrib>Krauss, T.F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moore, S.A.</au><au>O'Faolain, L.</au><au>Cataluna, M.A.</au><au>Flynn, M.B.</au><au>Kotlyar, M.V.</au><au>Krauss, T.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reduced surface sidewall recombination and diffusion in quantum-dot lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2006-09-01</date><risdate>2006</risdate><volume>18</volume><issue>17</issue><spage>1861</spage><epage>1863</epage><pages>1861-1863</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10 4 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5times10 5 cm/s and 5 mum, respectively) allowing the creation of narrow (2-3 mum wide) lasers with comparable threshold currents to those of broad area devices</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2006.881206</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 1041-1135
ispartof	IEEE photonics technology letters, 2006-09, Vol.18 (17), p.1861-1863
issn	1041-1135 1941-0174
language	eng
recordid	cdi_crossref_primary_10_1109_LPT_2006_881206
source	IEEE Xplore (Online service)
subjects	Carrier confinement Confinement Current carriers Diffusion length Lasers low threshold Optical materials Quantum dot lasers Quantum dots Quantum well lasers Quantum wells Radiative recombination Semiconductor lasers Semiconductor materials Surface emitting lasers surface recombination Threshold current Threshold currents
title	Reduced surface sidewall recombination and diffusion in quantum-dot lasers
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T07%3A38%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Reduced%20surface%20sidewall%20recombination%20and%20diffusion%20in%20quantum-dot%20lasers&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Moore,%20S.A.&rft.date=2006-09-01&rft.volume=18&rft.issue=17&rft.spage=1861&rft.epage=1863&rft.pages=1861-1863&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2006.881206&rft_dat=%3Cproquest_cross%3E896209006%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c320t-22f1bc00550e57177240d0833d3b4ef6fbdaae0af3e5da5f4947c05a96068f483%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=866356225&rft_id=info:pmid/&rft_ieee_id=1677638&rfr_iscdi=true