Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes

We report electrical and electrooptical characteristic of mesa-structure 6H-SiC PIN avalanche photodiodes. At a gain of 1000, the dark current density is 9.2 muA/cm 2 . The excess noise factor corresponds to a k value of ~0.1. In addition, peak responsivity of 80 mA/W was observed at 290 nm (externa...

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Bibliographic Details
Published in:IEEE photonics technology letters 2006-12, Vol.18 (23), p.2508-2510
Main Authors: Han-Din Liu, Xiangyi Guo, McIntosh, D., Campbell, J.C.
Format: Article
Language:English
Subjects:
Annealing
Avalanche photodiode (APD)
Avalanche photodiodes
Avalanches
Dark current
Density
Electrooptical
Etching
Fabrication
Fluorescence
Gain
impact ionization
Laser excitation
Passivation
photodetector
Photodiodes
Photonics
Quantum efficiency
silicon carbide
Substrates
Thermal conductivity
ultraviolet (UV)
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Summary:We report electrical and electrooptical characteristic of mesa-structure 6H-SiC PIN avalanche photodiodes. At a gain of 1000, the dark current density is 9.2 muA/cm 2 . The excess noise factor corresponds to a k value of ~0.1. In addition, peak responsivity of 80 mA/W was observed at 290 nm (external quantum efficiency of ~35%)
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.887211