Fabrication of Microcavity Light-Emitting Diodes Using Highly Reflective AlN-GaN and Ta O -SiO Distributed Bragg Mirrors

We report the fabrication of microcavity light-emitting diodes (MCLEDs) with high reflectivity and crack-free AlN-GaN distributed Bragg reflector (DBR). The 5lambda microcavity structure consists of an n-type GaN, ten pairs InGaN-GaN multiple quantum wells and p-type GaN sandwiched between the hybri...

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Bibliographic Details
Published in:IEEE photonics technology letters 2007-07, Vol.19 (13), p.999-1001
Main Authors: Huang, G.S., Lu, T.C., Kuo, H.C., Wang, S.C., Hou-Guang Chen
Format: Article
Language:English
Subjects:
Distributed Bragg reflector (DBR)
Distributed Bragg reflectors
Fabrication
Gallium nitride
GaN
Light emitting diodes
Microcavities
microcavity light-emitting diode (MCLED)
Polarization
Reflectivity
Superlattices
Surface cracks
Surface morphology
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Summary:We report the fabrication of microcavity light-emitting diodes (MCLEDs) with high reflectivity and crack-free AlN-GaN distributed Bragg reflector (DBR). The 5lambda microcavity structure consists of an n-type GaN, ten pairs InGaN-GaN multiple quantum wells and p-type GaN sandwiched between the hybrid cavity mode of an AlN-GaN and a Ta 2 O 5 -SiO 2 DBR. The AlN-GaN DBR has 29 periods with insertion of six AlN-GaN superlattice layers showing a crack-free surface morphology and a high peak reflectivity of 99.4% with a stopband of 21 nm. The output power of MCLED is about 11 W at an injection current of 7 mA. The electroluminescence has a polarization property with a degree of polarization of about 51%.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.898763