10-Gb/s AlGaInAs Colorless Remote Amplified Modulator by Selective Area Growth for Wavelength Agnostic Networks

We developed a 10-Gb/s AlGaInAs colorless remote amplified modulator with a gain peak detuned semiconductor optical amplifier using a selective epitaxy and semi-insulating buried heterostructure. The device provides up to 10-dB insertion gain and lossless operation together with static extinction ra...

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Bibliographic Details
Published in:IEEE photonics technology letters 2008-11, Vol.20 (21), p.1808-1810
Main Authors: Dupuis, Nicolas, Decobert, Jean, Jany, Christophe, Alexandre, Francois, Garreau, Alexandre, Lagay, Nadine, Martin, Florence, Carpentier, DaniÈle, Landreau, Jean, Kazmierski, Christophe
Format: Article
Language:English
Subjects:
Absorption
Amplification
Costs
Devices
Electroabsorption modulators
Epitaxial growth
Extinction ratio
Gain
Insertion
Insertion loss
Modulation
Modulators
Networks
Optical fiber devices
Optical losses
Optical network units
Performance gain
selective area growth (SAG)
semiconductor optical amplifier (SOA)
Semiconductor optical amplifiers
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Summary:We developed a 10-Gb/s AlGaInAs colorless remote amplified modulator with a gain peak detuned semiconductor optical amplifier using a selective epitaxy and semi-insulating buried heterostructure. The device provides up to 10-dB insertion gain and lossless operation together with static extinction ratio larger than 20 dB over a 50-nm range. Using this device, we achieved 10-Gb/s remote modulation over 80-nm spectral range in a back-to-back transmission. The device operates also in a single-mode fiber bidirectional link without penalty at 20 ^{\circ} C.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.2004354