High Gain \times Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes

This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN x antireflection coating. The combined properties of very low dark current ( I dark ( M = 0) = 17 nA), low excess noise...

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Bibliographic Details
Published in:IEEE photonics technology letters 2008-03, Vol.20 (6), p.455-457
Main Authors: Rouvie, A., Carpentier, D., Lagay, N., Decobert, J., Pommereau, F., Achouche, M.
Format: Article
Language:English
Subjects:
Absorption
AlInAs
Avalanche photodiodes
avalanche photodiodes (APDs)
Bandwidth
Dark current
Dry etching
excess noise factor
gain-bandwidth product
Indium phosphide
multiplication
Optical noise
Optical receivers
Silicon compounds
Substrates
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Summary:This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN x antireflection coating. The combined properties of very low dark current ( I dark ( M = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.918229