Low-Crosstalk Fabrication-Insensitive Echelle Grating Demultiplexers on Silicon-on-Insulator

In this letter, we report about design, fabrication, and testing of echelle grating (EG) demultiplexers in the O-band (1.31-μm) for silicon-based photonic integrated circuits. In detail, flat band perfectly chirped EGs and two-point stigmatic EGs on the 300-nm thick silicon-on-insulator platform des...

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Bibliographic Details
Published in:IEEE photonics technology letters 2015-03, Vol.27 (5), p.494-497
Main Authors: Sciancalepore, Corrado, Lycett, Richard John, Dallery, Jacques A., Pauliac, Sebastien, Hassan, Karim, Harduin, Julie, Duprez, Helene, Weidenmueller, Ulf, Gallagher, Dominic F. G., Menezo, Sylvie, Ben Bakir, Badhise
Format: Article
Language:English
Subjects:
Arrayed waveguide gratings
Complementary metal-oxide-semiconductor (CMOS)
Crosstalk
Diffraction gratings
echelle gratings (EGs)
Gratings
Insertion loss
Optical filters
photonic integrated circuits (PICs)
silicon photonics
silicon-on-insulator (SOI)
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Summary:In this letter, we report about design, fabrication, and testing of echelle grating (EG) demultiplexers in the O-band (1.31-μm) for silicon-based photonic integrated circuits. In detail, flat band perfectly chirped EGs and two-point stigmatic EGs on the 300-nm thick silicon-on-insulator platform designed for 4 × 800-GHz spaced wavelength-division multiplexing featuring a low average crosstalk (-30 dB), a precise channel spacing, optimized interchannel uniformity (0.7 dB) and insertion losses (3-3.5 dB) are presented. Wafer-level statistical performance analysis shows the EG spectral response to be stable over the wafer in terms of crosstalk, channel spacing, and bandwidth with minimal wavelength dispersion (
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2014.2377075