InGaP/AlGaInP Quantum Well Discrete Mode Laser Diode Emitting at 689 nm

A discrete-mode laser diode, fabricated in the In0.6Ga0.4P/AlGaInP multiple quantum well system, emitting a single mode at \lambda =689 nm is reported. The laser has an ex-facet output power >10 mW at 30 °C and operates mode hop free in the temperature range 0 °C to 50 °C.

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Bibliographic Details
Published in:IEEE photonics technology letters 2018-02, Vol.30 (3), p.235-237
Main Authors: Phelan, Richard, Gleeson, Michael, Byrne, Diarmuid, O'Carroll, John, Long, Philip, Maigyte, Lina, Lennox, Robert, Carney, Kevin, Herbert, Chris, Somers, Jim, Kelly, Brian
Format: Article
Language:English
Subjects:
Diode lasers
Laser modes
Optical device fabrication
Optical waveguides
Red emitting sources
Semiconductor laser
Semiconductor lasers
Single mode laser
Stimulated emission
Strained quantum-well
Waveguide lasers
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Description
Summary:A discrete-mode laser diode, fabricated in the In0.6Ga0.4P/AlGaInP multiple quantum well system, emitting a single mode at \lambda =689 nm is reported. The laser has an ex-facet output power >10 mW at 30 °C and operates mode hop free in the temperature range 0 °C to 50 °C.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2017.2782773