48 W Continuous-Wave Output From a High- Efficiency Single Emitter Laser Diode at 915 nm

Improving the power and efficiency of 9xx-nm broad-area laser diodes has a great help in reducing the cost of laser systems and expanding applications. This letter presents an optimized epitaxial structure with high power and conversion efficiency. Laser diodes with 230 \mu \text{m} emitter width...

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Bibliographic Details
Published in:IEEE photonics technology letters 2022-11, Vol.34 (22), p.1218-1221
Main Authors: Liu, Yuxian, Yang, Guowen, Zhao, Yongming, Tang, Song, Lan, Yu, Zhao, Yuliang, Demir, Abdullah
Format: Article
Language:English
Subjects:
915 nm
Absorption
Continuous radiation
Diodes
Emitters
Energy conversion efficiency
Epitaxial growth
Heat sinks
high efficiency
high power
laser diode
Maximum power
Optical losses
Optical reflection
Optical refraction
Optical variables control
Power generation
Semiconductor laser
Semiconductor lasers
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Summary:Improving the power and efficiency of 9xx-nm broad-area laser diodes has a great help in reducing the cost of laser systems and expanding applications. This letter presents an optimized epitaxial structure with high power and conversion efficiency. Laser diodes with 230 \mu \text{m} emitter width and 5 mm cavity length deliver continuous-wave output power up to 48.5 W at 48 A, 30 °C, the highest power reported for 9xx-nm single emitter lasers so far. The slope efficiency is as high as 1.23 W/A due to a low internal optical loss of 0.31 cm−1 and a high internal efficiency of 96%. The maximum power conversion efficiency reaches 72.6% at 15.3 W and 67.3% at the operating power of 30 W under a heatsink temperature of 25 °C. Life test results show no failure in 1000 hours for 55 laser diodes.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2022.3207786