Assessing plasma-etched InP laser facet quality

This work presents an approach to assess the quality of etched laser facets, considering factors such as roughness, inclination, and non-uniform light emission. Broad area InP lasers, using plasma etched facets, operating at 1550 nm are manufactured with varying facet quality on five 100 mm wafers....

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Bibliographic Details
Published in:IEEE photonics technology letters 2024-06, Vol.36 (11), p.1-1
Main Authors: Burman, Tristan T., Cao, Zhongming, Allford, Craig, Baker, Jack, Patel, Jash, Ashraf, Huma, Shutts, Samuel, Smowton, Peter M.
Format: Article
Language:English
Subjects:
Etched Facets
III-V semiconductor materials
Inclination
Indium phosphide
Indium phosphides
InP Lasers
Lasers
Light emission
Measurement by laser beam
Optoelectronic Integration
Reflectance
Reflectivity
Rough surfaces
Roughness
Surface roughness
Surface treatment
Threshold currents
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Summary:This work presents an approach to assess the quality of etched laser facets, considering factors such as roughness, inclination, and non-uniform light emission. Broad area InP lasers, using plasma etched facets, operating at 1550 nm are manufactured with varying facet quality on five 100 mm wafers. Comparison of the threshold current density of lasers of different length was used to derive relative facet reflectivity and demonstrated the relationship between the reflectivity and the optical mode weighted facet roughness and facet inclination.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2024.3397082