Advances in Linear Modeling of Microwave Transistors

Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rather than MESFETs, high electron mobility transistors...

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Bibliographic Details
Published in:IEEE microwave magazine 2009-04, Vol.10 (2), p.100, 102-111, 146
Main Authors: Zarate-de Landa, A., Zuniga-Juarez, J., Loo-Yau, J., Reynoso-Hernandez, J., Maya-Sanchez, M., del Valle-Padilla, J.
Format: Magazinearticle
Language:English
Subjects:
Aluminum gallium nitride
Gallium arsenide
Gallium nitride
HEMTs
High electron mobility transistors
Indium phosphide
Indium phosphides
MESFETs
Microwave FETs
Microwave transistors
Microwaves
MODFETs
Semiconductor devices
Semiconductors
Silicon carbide
Transistors
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Summary:Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rather than MESFETs, high electron mobility transistors (HEMTs) and pseudomorphic HEMTs based on gallium arsenide (GaAs) or indium phosphide (InP) semiconductor technology. While AlGaN/GaN and SiC are good candidates for high-power applications, GaAs and InP semiconductor technologies are the preferred transistors in low-power, low-voltage, and low-noise applications [1].
ISSN:1527-3342
1557-9581
DOI:10.1109/MMM.2008.931675