Critical temperature of niobium and tantalum films

A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the...

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Bibliographic Details
Published in:Proceedings of the IEEE 1964-10, Vol.52 (10), p.1234-1238
Main Authors: Rairden, J.R., Neugebauer, C.A.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Atomic measurements
Electrical resistance measurement
Electron beams
Gettering
Impurities
Niobium
Superconducting films
Superconductivity
Temperature
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Summary:A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the substrate temperature during deposition gives films with a lower impurity content and higher critical temperature. The resistance ratio of a film and its x-ray lattice parameter are taken as measures of its average impurity concentration. Critical temperatures above 9°K are measured for Nb films of resistance ratio of 3 or higher, and critical temperatures above 4.2°K are measured for Ta films of resistance ratio of 5 or higher.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1964.3311