Critical temperature of niobium and tantalum films

A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the...

Full description

Saved in:
Bibliographic Details
Published in:Proceedings of the IEEE 1964-10, Vol.52 (10), p.1234-1238
Main Authors: Rairden, J.R., Neugebauer, C.A.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Atomic measurements
Electrical resistance measurement
Electron beams
Gettering
Impurities
Niobium
Superconducting films
Superconductivity
Temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c201t-a42617735de70d2b1ab65d8535b07d2bf35f626fac1f51b78c81641ee4e9f2ce3
cites cdi_FETCH-LOGICAL-c201t-a42617735de70d2b1ab65d8535b07d2bf35f626fac1f51b78c81641ee4e9f2ce3
container_end_page 1238
container_issue 10
container_start_page 1234
container_title Proceedings of the IEEE
container_volume 52
creator Rairden, J.R.
Neugebauer, C.A.
description A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the substrate temperature during deposition gives films with a lower impurity content and higher critical temperature. The resistance ratio of a film and its x-ray lattice parameter are taken as measures of its average impurity concentration. Critical temperatures above 9°K are measured for Nb films of resistance ratio of 3 or higher, and critical temperatures above 4.2°K are measured for Ta films of resistance ratio of 5 or higher.
doi_str_mv 10.1109/PROC.1964.3311
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_crossref_primary_10_1109_PROC_1964_3311</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1445241</ieee_id><sourcerecordid>10_1109_PROC_1964_3311</sourcerecordid><originalsourceid>FETCH-LOGICAL-c201t-a42617735de70d2b1ab65d8535b07d2bf35f626fac1f51b78c81641ee4e9f2ce3</originalsourceid><addsrcrecordid>eNpFj81KxDAYRYMoWEe3btz0BVrz5a_tUoo6wsCIzKxDmn6BSH-GJLPw7W0ZwdXlwj0XDiGPQEsA2jx_fu3bEholSs4BrkgGUtYFY1Jdk4xSqIuGQXNL7mL8ppRyqXhGWBt88tYMecLxhMGkc8B8dvnk586fx9xMfZ7MlMywFOeHMd6TG2eGiA9_uSHHt9dDuy12-_eP9mVXWEYhFUYwBVXFZY8V7VkHplOyryWXHa2W7rh0iilnLDgJXVXbGpQARIGNYxb5hpSXXxvmGAM6fQp-NOFHA9WrsV6N9WqsV-MFeLoAHhH_x0JIJoD_AklEUbg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Critical temperature of niobium and tantalum films</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Rairden, J.R. ; Neugebauer, C.A.</creator><creatorcontrib>Rairden, J.R. ; Neugebauer, C.A.</creatorcontrib><description>A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the substrate temperature during deposition gives films with a lower impurity content and higher critical temperature. The resistance ratio of a film and its x-ray lattice parameter are taken as measures of its average impurity concentration. Critical temperatures above 9°K are measured for Nb films of resistance ratio of 3 or higher, and critical temperatures above 4.2°K are measured for Ta films of resistance ratio of 5 or higher.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/PROC.1964.3311</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atomic layer deposition ; Atomic measurements ; Electrical resistance measurement ; Electron beams ; Gettering ; Impurities ; Niobium ; Superconducting films ; Superconductivity ; Temperature</subject><ispartof>Proceedings of the IEEE, 1964-10, Vol.52 (10), p.1234-1238</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c201t-a42617735de70d2b1ab65d8535b07d2bf35f626fac1f51b78c81641ee4e9f2ce3</citedby><cites>FETCH-LOGICAL-c201t-a42617735de70d2b1ab65d8535b07d2bf35f626fac1f51b78c81641ee4e9f2ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1445241$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,54795</link.rule.ids></links><search><creatorcontrib>Rairden, J.R.</creatorcontrib><creatorcontrib>Neugebauer, C.A.</creatorcontrib><title>Critical temperature of niobium and tantalum films</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the substrate temperature during deposition gives films with a lower impurity content and higher critical temperature. The resistance ratio of a film and its x-ray lattice parameter are taken as measures of its average impurity concentration. Critical temperatures above 9°K are measured for Nb films of resistance ratio of 3 or higher, and critical temperatures above 4.2°K are measured for Ta films of resistance ratio of 5 or higher.</description><subject>Atomic layer deposition</subject><subject>Atomic measurements</subject><subject>Electrical resistance measurement</subject><subject>Electron beams</subject><subject>Gettering</subject><subject>Impurities</subject><subject>Niobium</subject><subject>Superconducting films</subject><subject>Superconductivity</subject><subject>Temperature</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1964</creationdate><recordtype>article</recordtype><recordid>eNpFj81KxDAYRYMoWEe3btz0BVrz5a_tUoo6wsCIzKxDmn6BSH-GJLPw7W0ZwdXlwj0XDiGPQEsA2jx_fu3bEholSs4BrkgGUtYFY1Jdk4xSqIuGQXNL7mL8ppRyqXhGWBt88tYMecLxhMGkc8B8dvnk586fx9xMfZ7MlMywFOeHMd6TG2eGiA9_uSHHt9dDuy12-_eP9mVXWEYhFUYwBVXFZY8V7VkHplOyryWXHa2W7rh0iilnLDgJXVXbGpQARIGNYxb5hpSXXxvmGAM6fQp-NOFHA9WrsV6N9WqsV-MFeLoAHhH_x0JIJoD_AklEUbg</recordid><startdate>19641001</startdate><enddate>19641001</enddate><creator>Rairden, J.R.</creator><creator>Neugebauer, C.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19641001</creationdate><title>Critical temperature of niobium and tantalum films</title><author>Rairden, J.R. ; Neugebauer, C.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c201t-a42617735de70d2b1ab65d8535b07d2bf35f626fac1f51b78c81641ee4e9f2ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1964</creationdate><topic>Atomic layer deposition</topic><topic>Atomic measurements</topic><topic>Electrical resistance measurement</topic><topic>Electron beams</topic><topic>Gettering</topic><topic>Impurities</topic><topic>Niobium</topic><topic>Superconducting films</topic><topic>Superconductivity</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rairden, J.R.</creatorcontrib><creatorcontrib>Neugebauer, C.A.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rairden, J.R.</au><au>Neugebauer, C.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Critical temperature of niobium and tantalum films</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1964-10-01</date><risdate>1964</risdate><volume>52</volume><issue>10</issue><spage>1234</spage><epage>1238</epage><pages>1234-1238</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the substrate temperature during deposition gives films with a lower impurity content and higher critical temperature. The resistance ratio of a film and its x-ray lattice parameter are taken as measures of its average impurity concentration. Critical temperatures above 9°K are measured for Nb films of resistance ratio of 3 or higher, and critical temperatures above 4.2°K are measured for Ta films of resistance ratio of 5 or higher.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1964.3311</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9219
ispartof Proceedings of the IEEE, 1964-10, Vol.52 (10), p.1234-1238
issn 0018-9219
1558-2256
language eng
recordid cdi_crossref_primary_10_1109_PROC_1964_3311
source IEEE Electronic Library (IEL) Journals
subjects Atomic layer deposition
Atomic measurements
Electrical resistance measurement
Electron beams
Gettering
Impurities
Niobium
Superconducting films
Superconductivity
Temperature
title Critical temperature of niobium and tantalum films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T14%3A45%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Critical%20temperature%20of%20niobium%20and%20tantalum%20films&rft.jtitle=Proceedings%20of%20the%20IEEE&rft.au=Rairden,%20J.R.&rft.date=1964-10-01&rft.volume=52&rft.issue=10&rft.spage=1234&rft.epage=1238&rft.pages=1234-1238&rft.issn=0018-9219&rft.eissn=1558-2256&rft.coden=IEEPAD&rft_id=info:doi/10.1109/PROC.1964.3311&rft_dat=%3Ccrossref_ieee_%3E10_1109_PROC_1964_3311%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c201t-a42617735de70d2b1ab65d8535b07d2bf35f626fac1f51b78c81641ee4e9f2ce3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1445241&rfr_iscdi=true