Current pulses during breakdown in silicon P-N junctions

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Published in:Proceedings of the IEEE 1965-01, Vol.53 (2), p.210-211
Main Author: Tan, D.S.
Format: Article
Language:English
Subjects:
Bolometers
Electric breakdown
Electrons
Frequency
Noise level
P-n junctions
Pulse measurements
Silicon
Temperature measurement
Voltage
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cited_by cdi_FETCH-LOGICAL-c259t-eb9992e564c4a14c93ec766e5463f106b027c1ddacf247df40d6e2b4fcc8a9863
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container_end_page 211
container_issue 2
container_start_page 210
container_title Proceedings of the IEEE
container_volume 53
creator Tan, D.S.
description
doi_str_mv 10.1109/PROC.1965.3649
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_crossref_primary_10_1109_PROC_1965_3649</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1445579</ieee_id><sourcerecordid>10_1109_PROC_1965_3649</sourcerecordid><originalsourceid>FETCH-LOGICAL-c259t-eb9992e564c4a14c93ec766e5463f106b027c1ddacf247df40d6e2b4fcc8a9863</originalsourceid><addsrcrecordid>eNpFz0tLAzEUhuEgCo7VrRs3-QMZc585Sxm8QbFFdB1mcpHUmilJB_Hf26GCq7M57wcPQteM1oxRuF2_rrqagVa10BJOUMWUagnnSp-iilLWEuAMztFFKRtKqVBaVKjtppx92uPdtC2-YDflmD7wkH3_6cbvhGPCJW6jHRNekxe8mZLdxzGVS3QW-kNy9XcX6P3h_q17IsvV43N3tySWK9gTPwAA90pLK3smLQhvG629kloERvVAeWOZc70NXDYuSOq054MM1rY9tFosUH3ctXksJftgdjl-9fnHMGpmt5ndZnab2X0Ibo5B9N7_P0upVAPiF7Y1VDc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Current pulses during breakdown in silicon P-N junctions</title><source>IEEE Xplore (Online service)</source><creator>Tan, D.S.</creator><creatorcontrib>Tan, D.S.</creatorcontrib><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/PROC.1965.3649</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bolometers ; Electric breakdown ; Electrons ; Frequency ; Noise level ; P-n junctions ; Pulse measurements ; Silicon ; Temperature measurement ; Voltage</subject><ispartof>Proceedings of the IEEE, 1965-01, Vol.53 (2), p.210-211</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c259t-eb9992e564c4a14c93ec766e5463f106b027c1ddacf247df40d6e2b4fcc8a9863</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1445579$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,54777</link.rule.ids></links><search><creatorcontrib>Tan, D.S.</creatorcontrib><title>Current pulses during breakdown in silicon P-N junctions</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><subject>Bolometers</subject><subject>Electric breakdown</subject><subject>Electrons</subject><subject>Frequency</subject><subject>Noise level</subject><subject>P-n junctions</subject><subject>Pulse measurements</subject><subject>Silicon</subject><subject>Temperature measurement</subject><subject>Voltage</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1965</creationdate><recordtype>article</recordtype><recordid>eNpFz0tLAzEUhuEgCo7VrRs3-QMZc585Sxm8QbFFdB1mcpHUmilJB_Hf26GCq7M57wcPQteM1oxRuF2_rrqagVa10BJOUMWUagnnSp-iilLWEuAMztFFKRtKqVBaVKjtppx92uPdtC2-YDflmD7wkH3_6cbvhGPCJW6jHRNekxe8mZLdxzGVS3QW-kNy9XcX6P3h_q17IsvV43N3tySWK9gTPwAA90pLK3smLQhvG629kloERvVAeWOZc70NXDYuSOq054MM1rY9tFosUH3ctXksJftgdjl-9fnHMGpmt5ndZnab2X0Ibo5B9N7_P0upVAPiF7Y1VDc</recordid><startdate>19650101</startdate><enddate>19650101</enddate><creator>Tan, D.S.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19650101</creationdate><title>Current pulses during breakdown in silicon P-N junctions</title><author>Tan, D.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c259t-eb9992e564c4a14c93ec766e5463f106b027c1ddacf247df40d6e2b4fcc8a9863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1965</creationdate><topic>Bolometers</topic><topic>Electric breakdown</topic><topic>Electrons</topic><topic>Frequency</topic><topic>Noise level</topic><topic>P-n junctions</topic><topic>Pulse measurements</topic><topic>Silicon</topic><topic>Temperature measurement</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tan, D.S.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tan, D.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current pulses during breakdown in silicon P-N junctions</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1965-01-01</date><risdate>1965</risdate><volume>53</volume><issue>2</issue><spage>210</spage><epage>211</epage><pages>210-211</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><pub>IEEE</pub><doi>10.1109/PROC.1965.3649</doi><tpages>2</tpages></addata></record>
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ispartof Proceedings of the IEEE, 1965-01, Vol.53 (2), p.210-211
issn 0018-9219
1558-2256
language eng
recordid cdi_crossref_primary_10_1109_PROC_1965_3649
source IEEE Xplore (Online service)
subjects Bolometers
Electric breakdown
Electrons
Frequency
Noise level
P-n junctions
Pulse measurements
Silicon
Temperature measurement
Voltage
title Current pulses during breakdown in silicon P-N junctions
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T21%3A25%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Current%20pulses%20during%20breakdown%20in%20silicon%20P-N%20junctions&rft.jtitle=Proceedings%20of%20the%20IEEE&rft.au=Tan,%20D.S.&rft.date=1965-01-01&rft.volume=53&rft.issue=2&rft.spage=210&rft.epage=211&rft.pages=210-211&rft.issn=0018-9219&rft.eissn=1558-2256&rft.coden=IEEPAD&rft_id=info:doi/10.1109/PROC.1965.3649&rft_dat=%3Ccrossref_ieee_%3E10_1109_PROC_1965_3649%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c259t-eb9992e564c4a14c93ec766e5463f106b027c1ddacf247df40d6e2b4fcc8a9863%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1445579&rfr_iscdi=true