Nonradiative surface recombination in electron-beam pumped GaAs lasers

Measurements of threshold pumping power as a function of beam voltage and measurements of output power as a function of input power, with beam voltage as a parameter, strongly suggest that surface recombination contributes heavily to nonradiative transitions in electron-beam pumped GaAs lasers at vo...

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Bibliographic Details
Published in:Proceedings of the IEEE 1967-01, Vol.55 (11), p.2028-2029
Main Authors: Lavine, J.M., Adams, A.
Format: Article
Language:English
Subjects:
Gallium arsenide
Laser beams
Laser excitation
Laser transitions
Power measurement
Pump lasers
Spontaneous emission
Surface emitting lasers
Threshold voltage
Voltage measurement
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Summary:Measurements of threshold pumping power as a function of beam voltage and measurements of output power as a function of input power, with beam voltage as a parameter, strongly suggest that surface recombination contributes heavily to nonradiative transitions in electron-beam pumped GaAs lasers at voltages up to 30 kV, at both 4.2°K and 77°K.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1967.6046