Integrated Schottky-diode clamp for transistor storage time control

Integration of a Schottky-diode antisaturation clamp with an n-p-n silicon transistor is described. The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control.

Saved in:
Bibliographic Details
Published in:Proceedings of the IEEE 1968-01, Vol.56 (2), p.232-233
Main Authors: Chenette, E.R., Pedersen, R.A., Edwards, R., Kleimack, J.J.
Format: Article
Language:English
Subjects:
Asymptotic stability
Capacitance
Clamps
Damping
Differential equations
Lagrangian functions
Schottky barriers
Schottky diodes
Silicon
Voltage
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Integration of a Schottky-diode antisaturation clamp with an n-p-n silicon transistor is described. The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1968.6252