Aluminum metallization-Advantages and limitations for integrated circuit applications

The advantages and limitations of aluminum metallization are reviewed and compared with other systems used for integrated circuits. Metallization system properties of particular importance are summarized, including initial physical and chemical properties of the system which define potential perform...

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Bibliographic Details
Published in:Proceedings of the IEEE 1969-01, Vol.57 (9), p.1570-1580
Main Authors: Schnable, G.L., Keen, R.S.
Format: Article
Language:English
Subjects:
Aluminum
Application specific integrated circuits
Chemicals
Dielectrics
Inorganic materials
Integrated circuit metallization
Integrated circuit reliability
Large scale integration
Silicon
Sputtering
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Description
Summary:The advantages and limitations of aluminum metallization are reviewed and compared with other systems used for integrated circuits. Metallization system properties of particular importance are summarized, including initial physical and chemical properties of the system which define potential performance and reliability considerations. The special requirements for MOS arrays and for multilevel-metallized integrated circuits are described. Recently available knowledge of aluminum metallization process technology and of metallization-related failure mechanisms is reviewed, and new results of experimental studies are presented. It is concluded that aluminum will continue to be the most widely used metallization material, not only for single-level metallized integrated circuits, but also for multilevel LSI arrays.
ISSN:0018-9219
DOI:10.1109/PROC.1969.7338