X-band silicon double-drift IMPATT diodes using multiple epitaxy

Silicon double-drift IMPATT diodes made by consecutive epitaxial deposition have been fabricated successfully. Output power in excess of 1.7 W with 10-percent efficiency was obtained at X band.

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Published in:Proceedings of the IEEE 1972-01, Vol.60 (9), p.1104-1105
Main Author: Ying, R.S.
Format: Article
Language:English
Subjects:
Boron
Charge carrier processes
Epitaxial growth
Epitaxial layers
Frequency
Impedance
Ion implantation
Semiconductor diodes
Silicon
Substrates
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container_title Proceedings of the IEEE
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creator Ying, R.S.
description Silicon double-drift IMPATT diodes made by consecutive epitaxial deposition have been fabricated successfully. Output power in excess of 1.7 W with 10-percent efficiency was obtained at X band.
doi_str_mv 10.1109/PROC.1972.8861
format article
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source IEEE Electronic Library (IEL) Journals
subjects Boron
Charge carrier processes
Epitaxial growth
Epitaxial layers
Frequency
Impedance
Ion implantation
Semiconductor diodes
Silicon
Substrates
title X-band silicon double-drift IMPATT diodes using multiple epitaxy
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