A note on the efficiency of reflection amplifiers and locked oscillators

The dc to RF conversion efficiency for reflection amplifiers and locked oscillators employing negative resistance devices such as transferred-electron effect and avalanche diodes is discussed. It is shown that one particular definition of efficiency is more appropriate than another definition someti...

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Bibliographic Details
Published in:Proceedings of the IEEE 1972-01, Vol.60 (9), p.1112-1113
Main Authors: Quine, J.P., Pence, I.W.
Format: Article
Language:English
Subjects:
1f noise
Capacitance
Circuit noise
Frequency
Low-frequency noise
Noise shaping
Oscillators
Reflection
Signal to noise ratio
Voltage fluctuations
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Description
Summary:The dc to RF conversion efficiency for reflection amplifiers and locked oscillators employing negative resistance devices such as transferred-electron effect and avalanche diodes is discussed. It is shown that one particular definition of efficiency is more appropriate than another definition sometimes employed.
ISSN:0018-9219
DOI:10.1109/PROC.1972.8870