Fabrication and Properties of Longitudinal and Transverse Current Rectifier Devices Based on Superconducting Films With Arrays of Nanodefects

Superconducting rectifiers have been fabricated by electron beam lithography, sputtering and ion etching techniques. The rectifiers are made growing Nb films on top of arrays of submicrometric Ni triangles. In this device, in the superconducting mixed state, injecting an input AC current yields an o...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2009-06, Vol.19 (3), p.722-725
Main Authors: Perez de Lara, D., Gonzalez, E.M., Anguita, J.V., Vicent, J.L.
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Devices
Direct current
Electrical engineering. Electrical power engineering
Electromagnets
Electron beam lithography
Electron beams
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Fabrication
Lattices
Lithography
Magnetic fields
Microelectronic fabrication (materials and surfaces technology)
Nanoscale devices
Nanostructure
nanotechnology
Niobium
Rectifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sputter etching
Sputtering
Superconducting devices
Superconducting films
Superconductivity
Various equipment and components
Citations: Items that this one cites
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Description
Summary:Superconducting rectifiers have been fabricated by electron beam lithography, sputtering and ion etching techniques. The rectifiers are made growing Nb films on top of arrays of submicrometric Ni triangles. In this device, in the superconducting mixed state, injecting an input AC current yields an output DC voltage. This effect is due to the motion of the vortex lattice on periodic asymmetric pinning potentials. The vortex lattice dynamics follows ratchet effect behavior. The device shows two ratchet effects: Longitudinal and transverse. In the longitudinal ratchet effect the DC signal polarity could be switched increasing the applied magnetic field strength. Otherwise, the sign of the transverse effect does not change increasing the applied magnetic field.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2009.2018060