Large Signal Amplitude and Bias Range of Cascade Switch Superconducting Nanowire Single Photon Detectors

Cascade switch superconducting nanowire single photon detectors has been fabricated of ultrathin NbN films deposited by DC-magnetron sputtering at room temperature on MgO substrates. Detectors using 4 to 24 nanowires in parallel, having an area coverage of 5times mum 2 and a filling factor of 40%, h...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2009-06, Vol.19 (3), p.323-326
Main Authors: Ejrnaes, M., Casaburi, A., Quaranta, O., Marchetti, S., Gaggero, A., Mattioli, F., Leoni, R., Pagano, S., Cristiano, R.
Format: Article
Language:English
Subjects:
Amplitudes
Applied sciences
Circuit properties
Connection and protection apparatus
Critical current
Detectors
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electromagnets
Electronic circuits
Electronics
Exact sciences and technology
Filling
Infrared detectors
Nanocomposites
Nanomaterials
Nanostructure
nanotechnology
Nanowires
Noise level
Photons
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal detection
Sputtering
Superconducting device noise
Superconducting devices
Superconducting films
superconducting radiation detectors
Superconductivity
Switches
Switching, multiplexing, switched capacity circuits
Temperature
thin films
Various equipment and components
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Description
Summary:Cascade switch superconducting nanowire single photon detectors has been fabricated of ultrathin NbN films deposited by DC-magnetron sputtering at room temperature on MgO substrates. Detectors using 4 to 24 nanowires in parallel, having an area coverage of 5times mum 2 and a filling factor of 40%, have been investigated. Signal amplitudes increase with the number of parallel nanowires and reaches 12.3 mV with a signal noise of 20 muV. The range of bias currents where the detectors emit signal pulses also increase with the number of parallel nanowires and exceeds the nanowire critical current.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2009.2019034