Statistical Modeling With the PSP MOSFET Model

PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ri...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2010-04, Vol.29 (4), p.599-606
Main Authors: Xin Li, McAndrew, C.C., Weimin Wu, Chaudhry, S., Victory, J., Gildenblat, G.
Format: Article
Language:English
Subjects:
Backward propagation of variance
CMOS technology
Computer aided design
Computer simulation
Coupling circuits
Delay
Delay effects
Design engineering
FETs
Fitting
Gates
Integrated circuit modeling
Monte Carlo methods
MOS devices
MOSFET circuits
MOSFETs
Oscillators
Parasitic capacitance
PSP model
Ring oscillators
statistical modeling
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Description
Summary:PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2010.2042892