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Statistical Modeling With the PSP MOSFET Model
PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ri...
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| Published in: | IEEE transactions on computer-aided design of integrated circuits and systems 2010-04, Vol.29 (4), p.599-606 |
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| Main Authors: | , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c325t-919767584bd32fedaf113ea7d6fed1b8a092de425e38ac779528df48755882743 |
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| cites | cdi_FETCH-LOGICAL-c325t-919767584bd32fedaf113ea7d6fed1b8a092de425e38ac779528df48755882743 |
| container_end_page | 606 |
| container_issue | 4 |
| container_start_page | 599 |
| container_title | IEEE transactions on computer-aided design of integrated circuits and systems |
| container_volume | 29 |
| creator | Xin Li McAndrew, C.C. Weimin Wu Chaudhry, S. Victory, J. Gildenblat, G. |
| description | PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies. |
| doi_str_mv | 10.1109/TCAD.2010.2042892 |
| format | article |
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BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.</description><identifier>ISSN: 0278-0070</identifier><identifier>EISSN: 1937-4151</identifier><identifier>DOI: 10.1109/TCAD.2010.2042892</identifier><identifier>CODEN: ITCSDI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Backward propagation of variance ; CMOS technology ; Computer aided design ; Computer simulation ; Coupling circuits ; Delay ; Delay effects ; Design engineering ; FETs ; Fitting ; Gates ; Integrated circuit modeling ; Monte Carlo methods ; MOS devices ; MOSFET circuits ; MOSFETs ; Oscillators ; Parasitic capacitance ; PSP model ; Ring oscillators ; statistical modeling</subject><ispartof>IEEE transactions on computer-aided design of integrated circuits and systems, 2010-04, Vol.29 (4), p.599-606</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.</description><subject>Backward propagation of variance</subject><subject>CMOS technology</subject><subject>Computer aided design</subject><subject>Computer simulation</subject><subject>Coupling circuits</subject><subject>Delay</subject><subject>Delay effects</subject><subject>Design engineering</subject><subject>FETs</subject><subject>Fitting</subject><subject>Gates</subject><subject>Integrated circuit modeling</subject><subject>Monte Carlo methods</subject><subject>MOS devices</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Oscillators</subject><subject>Parasitic capacitance</subject><subject>PSP model</subject><subject>Ring oscillators</subject><subject>statistical modeling</subject><issn>0278-0070</issn><issn>1937-4151</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpdkM1Lw0AQxRdRsFb_APES8OApdWc_srvHUj-hpYVWPC7bZGJT0qZmNwf_e7ekePA0PN7vDTOPkFugIwBqHleT8dOI0SgZFUwbdkYGYLhKBUg4JwPKlE4pVfSSXHm_pRSEZGZARsvgQuVDlbs6mTUF1tX-K_mswiYJG0wWy0Uymy9fnle9eU0uSld7vDnNIfmI3uQtnc5f3yfjaZpzJkNqwKhMSS3WBWclFq4E4OhUkUUBa-2oYQUKJpFrlytlJNNFKbSSUmumBB-Sh37voW2-O_TB7iqfY127PTadt0pyxTKTsUje_yO3Tdfu43EW4tMgDFAdKeipvG28b7G0h7baufYnQvZYoD0WaI8F2lOBMXPXZypE_OOl4FzJjP8CYa1ofQ</recordid><startdate>201004</startdate><enddate>201004</enddate><creator>Xin Li</creator><creator>McAndrew, C.C.</creator><creator>Weimin Wu</creator><creator>Chaudhry, S.</creator><creator>Victory, J.</creator><creator>Gildenblat, G.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| fulltext | fulltext |
| identifier | ISSN: 0278-0070 |
| ispartof | IEEE transactions on computer-aided design of integrated circuits and systems, 2010-04, Vol.29 (4), p.599-606 |
| issn | 0278-0070 1937-4151 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_TCAD_2010_2042892 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Backward propagation of variance CMOS technology Computer aided design Computer simulation Coupling circuits Delay Delay effects Design engineering FETs Fitting Gates Integrated circuit modeling Monte Carlo methods MOS devices MOSFET circuits MOSFETs Oscillators Parasitic capacitance PSP model Ring oscillators statistical modeling |
| title | Statistical Modeling With the PSP MOSFET Model |
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