Charge-Controlled Readout and BIST Circuit for MEMS Sensors

In this paper, we present a new readout circuit with an integrated built-in self-test (BIST) structure for capacitive microelectromechanical system (MEMS). In the proposed solution, instead of commonly used voltage control signals to test the device, charge-controlled stimuli are employed to cover a...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2013-03, Vol.32 (3), p.433-441
Main Authors: Basith, I. I., Kandalaft, N., Rashidzadeh, R., Ahmadi, M.
Format: Article
Language:English
Subjects:
Built-in self-test
Built-in self-test (BIST)
Calibration
Capacitance
Capacitors
Circuits
CMOS
Defects
Delay
Delay lines
Devices
Mathematical models
microelectromechanical system (MEMS)
Microelectromechanical systems
Micromechanical devices
ring oscillator
Stimuli
time-to-digital converter (TDC)
Voltage
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Description
Summary:In this paper, we present a new readout circuit with an integrated built-in self-test (BIST) structure for capacitive microelectromechanical system (MEMS). In the proposed solution, instead of commonly used voltage control signals to test the device, charge-controlled stimuli are employed to cover a wider range of structural defects. The proposed test solution eliminates the risk of structural collapse in the test phase for gap-varying parallel-plate MEMS devices. Measurement results using a prototype fabricated in TSMC 65-nm CMOS technology indicate that the proposed BIST scheme can successfully detect minor structural defects altering MEMS nominal capacitance.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2012.2218602