Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design

• Published in: IEEE transactions on computer-aided design of integrated circuits and systems 2017-07, Vol.36 (7), p.1181-1192
• Main Authors: Zhang, Yaojun, Yan, Bonan, Wang, Xiaobin, Chen, Yiran
• Format: Article
• Language: English
• Subjects: Magnetic tunneling; MOSFET; Process variation; Random access memory; reliability; Resistance; spin-transfer torque random access memory (STT-RAM); Switches; thermal fluctuation; Thermal stability
• ISSN: 0278-0070; 1937-4151
• DOI: 10.1109/TCAD.2016.2619484

Rapidly increasing demands for memory capacity and severe technical scaling challenges of conventional memory technologies motivated recent investments on next-generation nonvolatile memory technologies. As a promising candidate, spin-transfer torque random access memory (STT-RAM) has demonstrated many attractive properties, such as nanosecond access time, high integration density, nonvolatility, and excellent CMOS integration compatibility. However, similar to all other nano-devices, the performance and reliability of STT-RAM cells are greatly affected by process variations, device operating uncertainties, and environmental fluctuations. As a result, the read and write operations of STT-RAM demonstrate some variabilities and errors. In this paper, we systematically analyze the impacts of CMOS and magnetic tunneling junction (MTJ) process variations, MTJ resistance switching randomness that are induced by intrinsic thermal fluctuations, and working temperature changes on STT-RAM cell designs. The STT-RAM cell reliability issues in both read and write operations are first investigated. A combined circuit and magnetic simulation platform is then established to quantitatively study the persistent and nonpersistent errors in STT-RAM cell operations. Our analysis proved the importance of a full statistical design method in STT-RAM designs for design pessimism minimization.