Radiation Effects on Silicon Charge-Coupled Devices

The permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices, (CCD's), along with transient upset effects, are reviewed. The operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated. CCD structural...

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Published in:IEEE transactions on components, hybrids, and manufacturing technology hybrids, and manufacturing technology, 1978-12, Vol.1 (4), p.353-365
Main Author: Killiany, J.
Format: Article
Language:English
Subjects:
Charge coupled devices
Degradation
Insulation
Interface states
Ionization
Ionizing radiation
Nitrogen
Potential well
Radiation effects
Silicon
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description The permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices, (CCD's), along with transient upset effects, are reviewed. The operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated. CCD structural design rules for decreasing ionizing radiation sensitivity are presented. The increased total ionizing dose tolerance of CCD's fabricated with a radiation hard oxide is described. Liquid nitrogen temperature irradiation effects in CCD's are discussed.
doi_str_mv 10.1109/TCHMT.1978.1135311
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identifier ISSN: 0148-6411
ispartof IEEE transactions on components, hybrids, and manufacturing technology, 1978-12, Vol.1 (4), p.353-365
issn 0148-6411
1558-3082
language eng
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source IEEE Electronic Library (IEL) Journals
subjects Charge coupled devices
Degradation
Insulation
Interface states
Ionization
Ionizing radiation
Nitrogen
Potential well
Radiation effects
Silicon
title Radiation Effects on Silicon Charge-Coupled Devices
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