Investigation of Low-Temperature Cu-Cu Direct Bonding With Pt Passivation Layer in 3-D Integration

Pt has been investigated as a metal passivation material to achieve low-temperature Cu-Cu direct bonding process. With 10-nm Pt passivation layer capping on Cu surface, a good bonding surface with no oxides and small grain size can be obtained. During the low-temperature bonding process, Cu atoms di...

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Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2021-04, Vol.11 (4), p.573-578
Main Authors: Liu, Demin, Kuo, Tsung-Yi, Liu, Yu-Wei, Hong, Zhong-Jie, Chung, Ying-Ting, Chou, Tzu-Chieh, Hu, Han-Wen, Chen, Kuan-Neng
Format: Article
Language:English
Subjects:
3-D integration
Atomic layer deposition
Bonding
Bonding strength
Chemical bonds
Copper
Cu bonding
Diffusion
Grain size
Integrated circuits
Low temperature
low-temperature bonding
Passivation
Passivity
Pretreatment
Rough surfaces
Surface roughness
Surface treatment
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Summary:Pt has been investigated as a metal passivation material to achieve low-temperature Cu-Cu direct bonding process. With 10-nm Pt passivation layer capping on Cu surface, a good bonding surface with no oxides and small grain size can be obtained. During the low-temperature bonding process, Cu atoms diffuse through the passivation layer and form a new layer without any pretreatment. This bonding scheme with Pt passivation layer provides a solution for Cu low-temperature bonding, with excellent bonding strength, good electrical performance, and ability to endure temperature variation. In addition, both chip- and wafer-level bonding process have been successfully demonstrated, showing a high potential to be applied on 3-D integrated circuit (IC) and heterogeneous integration.
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2021.3069085