Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications

The implementation of backhauling links poses several challenges to the designers which are requested to limit the hardware costs in the framework of complex millimeter wave radio systems. This work presents a monolithically integrated E-band I/Q receiver covering the whole bandwidth from 71 to 86 G...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2021-09, Vol.68 (9), p.3098-3102
Main Authors: Amendola, Giandomenico, Boccia, Luigi, Centurelli, Francesco, Chevalier, Pascal, Fonte, Alessandro, Mustacchio, Carmine, Pallotta, Andrea, Tommasino, Pasquale, Traversa, Antonio, Trifiletti, Alessandro
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
Attenuation
Backhaul
BiCMOS integrated circuits
E-band
Gain
Linearity
Low noise
Millimeter waves
Mixers
Phase shifters
point to point communication
Receivers
SiGe
Silicon germanides
Silicon germanium
Variable gain
wideband receiver front-end
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Summary:The implementation of backhauling links poses several challenges to the designers which are requested to limit the hardware costs in the framework of complex millimeter wave radio systems. This work presents a monolithically integrated E-band I/Q receiver covering the whole bandwidth from 71 to 86 GHz. The chip was implemented in a 55 nm SiGe BiCMOS technology which allows reaching a high level of integration. The receiver is based on a Low Noise Amplifier (LNA) stage and a Variable-Gain Amplifier (VGA) which provide a −11 dBm IP1dB. A double balanced mixer provides I/Q baseband outputs through a reduced-size differential phase shifter which allows to contain the chip size to 1.8 mm 2 .
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2021.3096817