Stress migration lifetime for Cu interconnects with CoWP-only cap

Stress migration lifetime is characterized for a CoWP-only cap process (i.e., no dielectric cap) and a CoWP + SiN cap process. For the CoWP-only process, the stress migration lifetime depends on the CoWP thickness. In order to achieve a long stress migration lifetime, the CoWP must be sufficiently t...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2006-06, Vol.6 (2), p.197-202
Main Authors: Gambino, J.P., Johnson, C.L., Therrien, J.E., Hunt, D.B., Wynne, J.E., Smith, S., Mongeon, S.A., Pokrinchak, D.P., Levin, T.M.
Format: Magazinearticle
Language:English
Subjects:
Associate members
CONNECTORS (ELECTRICAL)
Copper
CoWP
Cu interconnect
Devices
Dielectrics
ELECTRONIC PRODUCTS
ETCHING
Integrated circuit interconnections
LAN interconnection
Migration
Photodiodes
Protection
Reflectivity
Silicon compounds
STRESS
stress migration
Stresses
STRIP
Strips
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Summary:Stress migration lifetime is characterized for a CoWP-only cap process (i.e., no dielectric cap) and a CoWP + SiN cap process. For the CoWP-only process, the stress migration lifetime depends on the CoWP thickness. In order to achieve a long stress migration lifetime, the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes. The data suggests that CoWP removal is enhanced beneath partially landed vias, resulting in reduced stress migration lifetime
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2006.876602