Prediction of Charged Device Model Peak Discharge Current for Microelectronic Components

This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of pa...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2014-09, Vol.14 (3), p.801-809
Main Authors: Shukla, Vrashank, Boselli, Gianluca, Dissegna, Mariano, Duvvury, Charvaka, Sankaralingam, Raj, Rosenbaum, Elyse
Format: Magazinearticle
Language:English
Subjects:
Bandwidth
Capacitance
Charging
Computational efficiency
Current measurement
Devices
Dielectrics
Discharges (electric)
Electrostatic discharges
Integrated circuit modeling
Mathematical models
Methodology
Microelectronics
Packages
Substrates
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Summary:This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2014.2342241