Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

An experimental concept of separating oxide-trapped charge and interface traps in silicon bipolar junction transistors (BJTs) irradiated by Co60 gamma ray is demonstrated. This concept is based on deep-level transient spectroscopy (DLTS) measurements with various filling pulsewidths. The characteris...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2015-06, Vol.15 (2), p.258-260
Main Authors: Li, Xingji, Liu, Chaoming, Yang, Jianqun
Format: Magazinearticle
Language:English
Subjects:
bipolar junction transistors
Bipolar transistors
DLTS
Electron traps
Ionization
Junctions
radiation damage
radiation defect
Radiation effects
Silicon
Transistors
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Summary:An experimental concept of separating oxide-trapped charge and interface traps in silicon bipolar junction transistors (BJTs) irradiated by Co60 gamma ray is demonstrated. This concept is based on deep-level transient spectroscopy (DLTS) measurements with various filling pulsewidths. The characteristics of oxide-trapped charge and interface traps in bipolar transistors can be obtained by DLTS. The oxide-trapped charge shows positive and negative signals in the collector of NPN and PNP BJTs in DLTS signals, respectively. Unlike the oxide-trapped charge, the interface traps give positive signals in the same region of NPN and PNP BJTs.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2015.2423316