ESD Protection Design With Diode-Triggered Quad-SCR for Separated Power Domains

To effectively protect the interface circuit between separated power domains from electrostatic discharge (ESD) damage, a new diode-triggered quad-silicon-controlled rectifier (DTQSCR) is proposed and realized in a 0.18- {\mu }\text{m} 1.8-V/3.3-V CMOS process. Since the DTQSCR embeds four silicon...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2019-06, Vol.19 (2), p.283-289
Main Authors: Chen, Jie-Ting, Ker, Ming-Dou
Format: Magazinearticle
Language:English
Subjects:
Circuit design
Circuit protection
Clamps
CMOS
Diodes
Domains
Electrostatic discharge (ESD)
Electrostatic discharges
ESD protection
Integrated circuits
Layout
Logic gates
Product development
Rectifiers
separated power domains
Silicon
Silicon controlled rectifiers
silicon-controlled rectifier (SCR)
Static electricity
Stress
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Summary:To effectively protect the interface circuit between separated power domains from electrostatic discharge (ESD) damage, a new diode-triggered quad-silicon-controlled rectifier (DTQSCR) is proposed and realized in a 0.18- {\mu }\text{m} 1.8-V/3.3-V CMOS process. Since the DTQSCR embeds four silicon-controlled rectifier paths and a structure of back-to-back diodes, the silicon area can be efficiently reduced more than 30% as compared to the traditional ESD protection design under the same ESD specification. From the measurement results in silicon chip, an interface circuit (level shifter) with the proposed ESD protection design can successfully sustain a human-body-model of greater than 5.5 kV. The proposed ESD protection device is suitable to protect the interface circuits between different power domains.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2019.2903209