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A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-μm CMOS technology

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Bibliographic Details
Published in:IEEE transactions on electron devices 2002-11, Vol.49 (11), p.1985-1992
Main Authors: Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee
Format: Article
Language:English
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ISSN:0018-9383
DOI:10.1109/TED.2002.804704