Short-channel modeling of bulk accumulation MOSFETs

Physically based short-channel effect (SCE) models are derived for bulk accumulation MOSFETs. Using the proposed models, threshold voltage rolloff, subthreshold swing, and subthreshold current can be accurately calculated; this enables physical insights into device scaling behavior, and prediction o...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-06, Vol.51 (6), p.940-947
Main Authors: Murali, R., Austin, B.L., Lihui Wang, Meindl, J.D.
Format: Article
Language:English
Subjects:
CMOS
Devices
Gates
Inversion layers
Inversions
Mathematical models
MOSFETs
Optimization
Semiconductor device modeling
Swing
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Summary:Physically based short-channel effect (SCE) models are derived for bulk accumulation MOSFETs. Using the proposed models, threshold voltage rolloff, subthreshold swing, and subthreshold current can be accurately calculated; this enables physical insights into device scaling behavior, and prediction of scaling limits. The models enable optimization of accumulation MOSFETs, resulting in small SCE, and low process sensitivity. The models are equally applicable to inversion MOSFETs, and allow easy comparison between accumulation and inversion MOSFETs. Novel application areas of accumulation MOSFETs are identified where they perform better than inversion MOSFETs (better on-current and lower SCE for a given off-current). With mid-band metal gate, accumulation MOSFETs perform better than inversion MOSFETs in ultra low power applications. For poly gate CMOS, accumulation MOSFETs perform better than inversion MOSFETs in low standby power applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.828276