MC simulation of strained-Si MOSFET with full-band structure and quantum correction

A new two-dimensional full-band Monte Carlo simulator, "Monte Carlo University of Texas" (MCUT) is introduced and described in this paper. MCUT combines some of the best features of semiclassical MC device simulation including full-band structure and flexibility of scattering processes, wi...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-06, Vol.51 (6), p.962-970
Main Authors: Xiao-Feng Fan, Xin Wang, Winstead, B., Register, L.F., Ravaioli, U., Banerjee, S.K.
Format: Article
Language:English
Subjects:
Channels
Computer simulation
Design automation
Devices
Monte Carlo methods
MOSFETs
Partial differential equations
Quantum confinement
Quantum theory
Semiconductor device modeling
Silicon
Strain
Transport
Valleys
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Summary:A new two-dimensional full-band Monte Carlo simulator, "Monte Carlo University of Texas" (MCUT) is introduced and described in this paper. MCUT combines some of the best features of semiclassical MC device simulation including full-band structure and flexibility of scattering processes, with generality of material composition and the ability to address degeneracy breaking among energy valleys and the associated effects on scattering and transport due to quantum confinement and strain effects. The latter capability derives from extension of a prior crystal-momentum-independent self-consistent Poisson-Schro/spl uml/dinger-based quantum corrected potential, to a valley dependent quantum correction via, in part, a new modeling concept of "effective strain" within the full-band structure code. Low field mobility simulation results for large tensile strained-Si channel nMOSFETs and unstrained-Si channel nMOSFETs device are compared with other simulation methods and experimental data to demonstrate the effectiveness of the approach, and the abilities to simulate high-field transport and transport in devices of a few 10s of nanometer channel lengths are briefly demonstrated.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.828296