Integration of optical polymer pillars chip I/O interconnections with Si MSM photodetectors

We demonstrate the process integration and characterization of mechanically compliant optical polymer pillar chip I/O interconnections with Si metal-semiconductor-metal photodetectors (MSM-PDs). Polymer pillar waveguides with various cross-sectional geometry, size, and aspect ratio are fabricated on...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-07, Vol.51 (7), p.1084-1090
Main Authors: Bakir, M.S., Chi On Chui, Okyay, A.K., Saraswat, K.C., Meindl, J.D.
Format: Article
Language:English
Subjects:
Charge carrier processes
Chips
Cross sections
Degradation
Interconnections
Mercury compounds
Photodetectors
Photodiodes
Pillars
Silicon
Titanium
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Summary:We demonstrate the process integration and characterization of mechanically compliant optical polymer pillar chip I/O interconnections with Si metal-semiconductor-metal photodetectors (MSM-PDs). Polymer pillar waveguides with various cross-sectional geometry, size, and aspect ratio are fabricated on the active area of Ti-Si-Ti MSM-PDs. Some of the key performance metrics of the MSM-PDs before and after the process integration are reported. It is shown that the dark current of passivated Ti-Si-Ti PDs does not degrade as a result of the processing required to fabricate the polymer pillar I/O interconnections. In addition, the pillar integration does not degrade the responsivity as well as the normalized photo-to-dark current ratio of the MSM-PDs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.830643