Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual substrates are presented. Device fabrication used high thermal budget processes and virtual substrates were not polished. Mobility enhancement facto...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-08, Vol.51 (8), p.1245-1253
Main Authors: Olsen, S.H., O'Neill, A.G., Chattopadhyay, S., Driscoll, L.S., Kwa, K.S.K., Norris, D.J., Cullis, A.G., Paul, D.J.
Format: Article
Language:English
Subjects:
Channels
Devices
Germanium
Interface roughness
MOSFETs
Oxides
Polished
Semiconductor device manufacture
Silicon compounds
Silicon germanides
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Summary:Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual substrates are presented. Device fabrication used high thermal budget processes and virtual substrates were not polished. Mobility enhancement factors exceeding 1.6 are demonstrated for both single-and dual-channel device architectures compared with bulk-Si control devices. Single-channel devices exhibit improved gate oxide quality, and larger mobility enhancements, at higher vertical effective fields compared with the dual-channel strain-compensated devices. The compromised performance enhancements of the dual-channel devices are attributed to greater interface roughness and increased Ge diffusion resulting from the Si/sub 0.7/Ge/sub 0.3/ buried channel layer.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.830652