Effect of doped substrate on GaAs-AlGaAs interfacial workfunction IR detector response through cavity effect

In this paper, results are reported showing response enhancement in GaAs-AlGaAs IR detectors using a doped substrate to increase reflection, enhancing the resonant cavity effect. Responsivity for heterojunction interfacial workfunction detectors grown on semi-insulating (SI) and doped substrates are...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-03, Vol.52 (3), p.413-418
Main Authors: Matsik, S.G., Rinzan, M.B.M., Esaev, D.G., Perera, A.G.U., von Winckel, G., Stintz, A., Krishna, S., Liu, H.C., Byloos, M.D., Oogarah, T., Sproule, G.I., Liu, K., Buchanan, M.
Format: Article
Language:English
Subjects:
Aluminum compounds
Applied sciences
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Circuit properties
Compound structure devices
Detectors
Devices
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
GaAs-AlGaAs
Gallium compounds
Heterojunctions
Holes
Infrared detectors
Infrared radiation
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Interface phenomena
IR detectors
Mathematical analysis
Optoelectronic devices
Oscillators, resonators, synthetizers
Physics
Reflection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon substrates
Work function
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Summary:In this paper, results are reported showing response enhancement in GaAs-AlGaAs IR detectors using a doped substrate to increase reflection, enhancing the resonant cavity effect. Responsivity for heterojunction interfacial workfunction detectors grown on semi-insulating (SI) and doped substrates are compared. For a device grown on an SI substrate, a 9-/spl mu/m resonance peak had a response of 1.5 mA/W while a similar device on an n-doped substrate showed 12 mA/W. Also, the difference between response under forward and reverse bias (3 versus 12 mA/W) for the sample grown on the doped substrate, as well as calculated results confirm that the increased response is due to the resonant enhancement. An optimized design for a 15-/spl mu/m peak (24 /spl mu/m 0 response threshold) detector grown on a doped substrate could expect a peak response of 4 A/W with a 50% quantum efficiency and D/sup */ /spl sim/ 2 /spl times/ 10/sup 10/ Jones at the background limited temperature of 50 K.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.843876