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Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications
A versatile method to tune the work function Phi M of metal nitride (MN x ) metal gates by incorporating lanthanide elements for the applications in NMOS devices is demonstrated. By incorporating lanthanide elements such as terbium (Tb), erbium (Er), or ytterbium (Yb) into MN x metal gates such as T...
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Published in: | IEEE transactions on electron devices 2006-08, Vol.53 (8), p.1877-1884 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A versatile method to tune the work function Phi M of metal nitride (MN x ) metal gates by incorporating lanthanide elements for the applications in NMOS devices is demonstrated. By incorporating lanthanide elements such as terbium (Tb), erbium (Er), or ytterbium (Yb) into MN x metal gates such as TaN and HfN, the work function of these MN x can be tuned continuously down to 4.2-4.3 eV even after rapid thermal annealing up to 1000 degC, owing to the very low Phi M values of lanthanide elements. Material and electrical properties of lanthanide-MN x are investigated, and the results indicate that N concentration is an important parameter for the resistivity, work function, and thermal stability of lanthanide-MN x metal gates. Therefore, it needs to be carefully optimized in the process. In addition, transistor characteristics with Ta 0.9 Tb 0.1 N y on SiO 2 are also demonstrated, and several issues regarding the process integration of these novel materials are discussed |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2006.878017 |