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Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

A versatile method to tune the work function Phi M of metal nitride (MN x ) metal gates by incorporating lanthanide elements for the applications in NMOS devices is demonstrated. By incorporating lanthanide elements such as terbium (Tb), erbium (Er), or ytterbium (Yb) into MN x metal gates such as T...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-08, Vol.53 (8), p.1877-1884
Main Authors: Ren, C., Chan, D.S.H., Li, M.-F., Loh, W.-Y., Balakumar, S., Tung, C.H., Balasubramanian, N., Kwong, D.-L.
Format: Article
Language:English
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Summary:A versatile method to tune the work function Phi M of metal nitride (MN x ) metal gates by incorporating lanthanide elements for the applications in NMOS devices is demonstrated. By incorporating lanthanide elements such as terbium (Tb), erbium (Er), or ytterbium (Yb) into MN x metal gates such as TaN and HfN, the work function of these MN x can be tuned continuously down to 4.2-4.3 eV even after rapid thermal annealing up to 1000 degC, owing to the very low Phi M values of lanthanide elements. Material and electrical properties of lanthanide-MN x are investigated, and the results indicate that N concentration is an important parameter for the resistivity, work function, and thermal stability of lanthanide-MN x metal gates. Therefore, it needs to be carefully optimized in the process. In addition, transistor characteristics with Ta 0.9 Tb 0.1 N y on SiO 2 are also demonstrated, and several issues regarding the process integration of these novel materials are discussed
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.878017