Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs

The inverse-mode operational regime of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) has to date been largely ignored and is typically dismissed as a viable possibility for circuit applications due to the general perception of its limited dc and ac performance capabilities. In t...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-06, Vol.54 (6), p.1492-1501
Main Authors: Appaswamy, A., Bellini, M., Wei-Min Lance Kuo, Peng Cheng, Jiahui Yuan, Chendong Zhu, Cressler, J.D., Guofu Niu, Joseph, A.J.
Format: Article
Language:English
Subjects:
Applied sciences
Calibration
Circuits
Current density
Devices
Electronics
Exact sciences and technology
Gain
Heterojunction bipolar transistors
Heterojunction bipolar transistors (HBTs)
Inverse
inverse mode
Perception
Performance evaluation
Physics
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanides
Silicon germanium
silicon germanium (SiGe) HBTs
Simulation
Transistors
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Summary:The inverse-mode operational regime of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) has to date been largely ignored and is typically dismissed as a viable possibility for circuit applications due to the general perception of its limited dc and ac performance capabilities. In this paper, the inverse-mode performance of four distinct generations of SiGe HBTs is investigated and is found to improve impressively with generational scaling. The physics behind these scaling-induced improvements is examined in detail using a combination of measurements and calibrated simulations. A novel lateral dependence of the inverse-mode base current is identified and is shown to potentially present new opportunities for even larger improvements in inverse-mode performance in SiGe HBTs. A record peak f T in inverse mode of 25 GHz is reported for a prototype fourth-generation device
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.896570