Impact of a Process Variation on Nanowire and Nanotube Device Performance

In this paper, we present an in-depth analysis of the nanowire and nanotube device performance under process variability. Although every process parameter variation drastically affects the conventional MOSFET performance, we found that nanowire/nanotube FETs are significantly less sensitive to many...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2369-2376
Main Authors: Paul, B.C., Fujita, S., Okajima, M., Lee, T.H., Wong, H.-S.P., Nishi, Y.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Circuit properties
Circuits
CNFET performance under variation
Constraining
Devices
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
FETs
FinFETs
Logic gates
Molecular electronics, nanoelectronics
MOSFET circuits
MOSFETs
Nanocomposites
Nanomaterials
Nanoscale devices
nanowire FET performance under variation
Nanowires
Performance evaluation
Process parameters
process variation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we present an in-depth analysis of the nanowire and nanotube device performance under process variability. Although every process parameter variation drastically affects the conventional MOSFET performance, we found that nanowire/nanotube FETs are significantly less sensitive to many process parameter variations due to their inherent device structures and geometric properties. It is observed that a two-input nand gate with nanowire or nanotube FETs shows a more than four times less performance variation than its bulk MOSFET counterpart and about two times less than FinFET devices at the 45 and 32 nm technologies, respectively. In other words, nanowire/nanotube FETs will have a larger margin for process parameter variations than bulk and FinFET devices for an allowable performance variation limit. While it is evident that process variations are going to be a major limiting factor for conventional MOSFET devices in future generations, this analysis is expected to further encourage nanowire and nanotube research for high-performance circuit applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.901882