Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation Modes

• Published in: IEEE transactions on electron devices 2008-03, Vol.55 (3), p.816-826
• Main Authors: Liu, Feng, He, Jin, Fu, Yue, Hu, Jinhua, Bian, Wei, Song, Yan, Zhang, Xing, Chan, Mansun
• Format: Article
• Language: English
• Subjects: Applied sciences; Asymmetry; Carriear-based model; Carriers; Channels; circuit simulation and design; compact modeling; Derivation; double-gate (DG) MOSFET; Electric potential; Electric, optical and optoelectronic circuits; Electronics; Equations; Exact sciences and technology; Integrated circuit modeling; Mathematical analysis; Mathematical model; Mathematical models; MOSFETs; nonclassical device; Numerical models; Poisson equation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Theoretical study. Circuits analysis and design; Transistors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2007.914836

A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFETs has been developed and is presented in this paper. The model is valid for symmetric, asymmetric, and independent-gate-operation modes. Based on the exact solution of the 1-D Poisson's equation in a general DG MOSFET configuration, a rigorous derivation of the drain-current equations from the Pao-Sah's double integral has been performed. By using the channel carriers as the intermediate variable, a very compact analytical drain-current expression can be obtained. The model is extensively verified by comparisons with a 2-D numerical simulator under a large number of biasing conditions. The concise mathematical formulation allows the unification of various DG models into a carrier-based core model for a compact DG MOSFET model development.