Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

We report the first demonstration of pure germanium (Ge) source/drain (S/D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ~ 100% I Dsat enhancement. We also introduce a novel Melt-En...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-11, Vol.55 (11), p.3048-3055
Main Authors: Tsung-Yang Liow, Kian-Ming Tan, Rinus Lee, Ming Zhu, Ben Lian-Huat Tan, Balasubramanian, N., Yee-Chia Yeo
Format: Article
Language:English
Subjects:
Channels
Drains
FETs
Germanium
Germanium stressors
Nanocomposites
Nanomaterials
Nanowires
Silicon
silicon-germanium stressors
Strain
strained silicon nanowires
Transistors
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Summary:We report the first demonstration of pure germanium (Ge) source/drain (S/D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ~ 100% I Dsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si 0.15 Ge 0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving ~ 125% I Dsat enhancement.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2005153