Numerical Study of Flicker Noise in p-Type \hbox\hbox/\hbox Heterostructure MOSFETs

Device-level simulation capabilities have been developed to investigate low-frequency noise behavior in p-type Si 0.7 Ge 0.3 /Si heterostructure MOS (SiGe p-HMOS) transistors. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation, a lay...

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Published in:IEEE transactions on electron devices 2008-07, Vol.55 (7), p.1741-1748
Main Authors: Chen, Chia-Yu, Liu, Yang, Dutton, Robert W., Sato-Iwanaga, Junko, Inoue, Akira, Sorada, Haruyuki
Format: Article
Language:English
Subjects:
1/f noise
Flicker noise
heterostructure
Logic gates
Low-frequency noise
Mathematical model
MOSFET
MOSFETs
Numerical models
SiGe
Silicon
Silicon germanium
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cited_by cdi_FETCH-LOGICAL-c1069-5242cdc39f052f8f12caf8831b3cc4f6ccc7840b8d07883d8ecaa83dbb1f8d8f3
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container_issue 7
container_start_page 1741
container_title IEEE transactions on electron devices
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creator Chen, Chia-Yu
Liu, Yang
Dutton, Robert W.
Sato-Iwanaga, Junko
Inoue, Akira
Sorada, Haruyuki
description Device-level simulation capabilities have been developed to investigate low-frequency noise behavior in p-type Si 0.7 Ge 0.3 /Si heterostructure MOS (SiGe p-HMOS) transistors. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation, a layer-dependent correlated mobility fluctuation, and a Hooge mobility fluctuation in the buried and parasitic surface channels, respectively. Simulations based on such models have been conducted for SiGe p-HMOS transistors, and the results have been carefully correlated with experimental data. Quantitative agreement has been obtained in terms of the noise level dependence on gate biases, drain currents, and body biases, revealing the important role of the dual channels in the low-frequency noise behavior of SiGe p-HMOS devices.
doi_str_mv 10.1109/TED.2008.925329
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subjects 1/f noise
Flicker noise
heterostructure
Logic gates
Low-frequency noise
Mathematical model
MOSFET
MOSFETs
Numerical models
SiGe
Silicon
Silicon germanium
title Numerical Study of Flicker Noise in p-Type \hbox\hbox/\hbox Heterostructure MOSFETs
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