Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

A simple threshold voltage model of an undoped symmetrical double-gate MOSFET has been developed, based on an analytical solution of Poisson's equation for the potential distribution. The model has been verified by comparing the threshold voltage roll-off with the channel length with simulation...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-09, Vol.55 (9), p.2512-2516
Main Authors: Tsormpatzoglou, A., Dimitriadis, C.A., Clerc, R., Pananakakis, G., Ghibaudo, G.
Format: Article
Language:English
Subjects:
Applied sciences
Calibration
Carrier density
Channels
Computer simulation
Density
Double-gate (DG) MOSFET
Electronics
Engineering Sciences
Exact sciences and technology
Logic gates
Mathematical model
Micro and nanotechnologies
Microelectronics
MOSFETs
Physics
Poisson equation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Simulation
Threshold voltage
threshold voltage modeling
Transistors
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Summary:A simple threshold voltage model of an undoped symmetrical double-gate MOSFET has been developed, based on an analytical solution of Poisson's equation for the potential distribution. The model has been verified by comparing the threshold voltage roll-off with the channel length with simulation results for different silicon thicknesses, gate oxide thicknesses, and drain voltage values. Good agreement between model and simulation results is obtained by calibrating the minimum carrier charge sheet density adequate to achieve the turn-on condition.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.927394